Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

On Practical Charge Injection at the Metal/Organic Semiconductor Interface

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory. - Abstract - Europe PMC

Materials, Free Full-Text

High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C

Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect

I-V characteristics of TiON films prepared via (a) single-step and (b)

Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors

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Ion-gating analysis on conduction mechanisms in oxide semiconductors - ScienceDirect

Demonstrating applicability of the unusual gate current paths as an